{"id":7993,"date":"2023-07-17T15:03:34","date_gmt":"2023-07-17T07:03:34","guid":{"rendered":"https:\/\/www.huashu-tech.com\/?p=7993"},"modified":"2023-07-17T15:03:42","modified_gmt":"2023-07-17T07:03:42","slug":"greatly-improving-polycrystalline-germanium-transistor-properties","status":"publish","type":"post","link":"https:\/\/www.huashu-tech.com\/vi\/greatly-improving-polycrystalline-germanium-transistor-properties\/","title":{"rendered":"C\u1ea3i thi\u1ec7n \u0111\u00e1ng k\u1ec3 t\u00ednh ch\u1ea5t b\u00f3ng b\u00e1n d\u1eabn germanium \u0111a tinh th\u1ec3"},"content":{"rendered":"

M\u1ed9t nh\u00f3m nghi\u00ean c\u1ee9u h\u1ee3p t\u00e1c \u0111\u00e3 ph\u00e1t tri\u1ec3n c\u00f4ng ngh\u1ec7 t\u1ea1o m\u00e0ng \u0111a tinh th\u1ec3 m\u1edbi \u0111\u1ec3 \u0111\u1ea1t \u0111\u01b0\u1ee3c c\u00f4ng ngh\u1ec7 x\u1ebfp ch\u1ed3ng ba chi\u1ec1u (3D) cho c\u00e1c m\u1ea1ch t\u00edch h\u1ee3p (LSI) quy m\u00f4 l\u1edbn, c\u1ea3i thi\u1ec7n \u0111\u00e1ng k\u1ec3 hi\u1ec7u su\u1ea5t c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn germanium \u0111a tinh th\u1ec3 lo\u1ea1i N (Ge).<\/p>\n

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Ge \u0111a tinh th\u1ec3 c\u00f3 th\u1ec3 \u0111\u01b0\u1ee3c h\u00ecnh th\u00e0nh \u1edf nhi\u1ec7t \u0111\u1ed9 th\u1ea5p h\u01a1n (500\u00b0C ho\u1eb7c th\u1ea5p h\u01a1n) so v\u1edbi silicon \u0111a tinh th\u1ec3 (Si) \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng r\u1ed9ng r\u00e3i. \u0110i\u1ec1u n\u00e0y cho ph\u00e9p c\u00e1c m\u1ea1ch CMOS \u0111\u01b0\u1ee3c x\u1ebfp ch\u1ed3ng tr\u1ef1c ti\u1ebfp l\u00ean\u00a0m\u1ea1ch t\u00edch h\u1ee3p<\/a>\u00a0m\u00e0 kh\u00f4ng g\u00e2y ra thi\u1ec7t h\u1ea1i v\u1ec1 nhi\u1ec7t, \u0111\u00e2y h\u1ee9a h\u1eb9n l\u00e0 m\u1ed9t c\u00f4ng ngh\u1ec7 c\u01a1 b\u1ea3n cho 3D-LSI. Ngo\u00e0i ra, \u0111\u1ed9 linh \u0111\u1ed9ng c\u1ee7a c\u00e1c electron v\u00e0 l\u1ed7 tr\u1ed1ng trong Ge cao h\u01a1n trong Si n\u00ean c\u00f3 th\u1ec3 ho\u1ea1t \u0111\u1ed9ng \u1edf t\u1ed1c \u0111\u1ed9 cao v\u00e0 ho\u1ea1t \u0111\u1ed9ng \u1edf \u0111i\u1ec7n \u00e1p th\u1ea5p. C\u00e1c b\u00f3ng b\u00e1n d\u1eabn lo\u1ea1i N v\u00e0 lo\u1ea1i P \u0111\u01b0\u1ee3c y\u00eau c\u1ea7u cho c\u00e1c ho\u1ea1t \u0111\u1ed9ng c\u1ee7a m\u1ea1ch t\u00edch h\u1ee3p. C\u00e1c b\u00f3ng b\u00e1n d\u1eabn lo\u1ea1i P c\u1ee7a Ge \u0111a tinh th\u1ec3 \u0111\u00e3 \u0111\u1ea1t \u0111\u01b0\u1ee3c hi\u1ec7u su\u1ea5t \u0111\u1ee7 g\u1ea7n b\u1eb1ng c\u00e1c b\u00f3ng b\u00e1n d\u1eabn Si \u0111\u01a1n tinh th\u1ec3 th\u00f4ng th\u01b0\u1eddng. Tuy nhi\u00ean, d\u00f2ng \u0111i\u1ec7n \u0111i\u1ec1u khi\u1ec3n c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn lo\u1ea1i N th\u1ea5p h\u01a1n so v\u1edbi b\u00f3ng b\u00e1n d\u1eabn Si th\u00f4ng th\u01b0\u1eddng t\u1eeb 10 l\u1ea7n tr\u1edf l\u00ean, \u0111\u00e2y l\u00e0 m\u1ed9t v\u1ea5n \u0111\u1ec1. C\u00f4ng ngh\u1ec7 \u0111\u01b0\u1ee3c ph\u00e1t tri\u1ec3n \u0111\u00e3 t\u0103ng d\u00f2ng truy\u1ec1n \u0111\u1ed9ng l\u00ean kho\u1ea3ng 10 l\u1ea7n so v\u1edbi c\u00f4ng ngh\u1ec7 th\u00f4ng th\u01b0\u1eddng, do \u0111\u00f3, t\u1ed1c \u0111\u1ed9 ho\u1ea1t \u0111\u1ed9ng c\u1ee7a m\u1ea1ch t\u00edch h\u1ee3p Ge \u0111a tinh th\u1ec3 d\u1ef1 ki\u1ebfn s\u1ebd \u1edf m\u1ee9c c\u1ea7n thi\u1ebft \u0111\u1ec3 s\u1eed d\u1ee5ng th\u1ef1c t\u1ebf v\u00e0 g\u00f3p ph\u1ea7n hi\u1ec7n th\u1ef1c h\u00f3a c\u00e1c thi\u1ebft b\u1ecb 3D-LSI.<\/p>\n

C\u00e1c chi ti\u1ebft v\u1ec1 c\u00f4ng ngh\u1ec7 \u0111\u01b0\u1ee3c ph\u00e1t tri\u1ec3n \u0111\u00e3 \u0111\u01b0\u1ee3c c\u00f4ng b\u1ed1 t\u1ea1i \u201cH\u1ed9i ngh\u1ecb Thi\u1ebft b\u1ecb \u0110i\u1ec7n t\u1eed Qu\u1ed1c t\u1ebf 2014\u201d \u0111\u01b0\u1ee3c t\u1ed5 ch\u1ee9c t\u1ea1i San Francisco, Hoa K\u1ef3 v\u00e0o ng\u00e0y 15-17 th\u00e1ng 12 n\u0103m 2014.<\/p>\n

Ng\u00e0y nay, nhi\u1ec1u ng\u01b0\u1eddi s\u1edf h\u1eefu c\u00e1c thi\u1ebft b\u1ecb CNTT nh\u01b0 \u0111i\u1ec7n tho\u1ea1i th\u00f4ng minh v\u00e0 m\u00e1y t\u00ednh b\u1ea3ng v\u00e0 l\u01b0\u1ee3ng th\u00f4ng tin \u0111\u01b0\u1ee3c x\u1eed l\u00fd \u0111\u00e3 t\u0103ng l\u00ean \u0111\u00e1ng k\u1ec3. M\u1eb7c d\u00f9 mong mu\u1ed1n c\u1ea3i thi\u1ec7n h\u01a1n n\u1eefa kh\u1ea3 n\u0103ng x\u1eed l\u00fd th\u00f4ng tin c\u1ee7a c\u00e1c thi\u1ebft b\u1ecb CNTT nh\u01b0ng l\u01b0\u1ee3ng \u0111i\u1ec7n n\u0103ng m\u00e0 ch\u00fang ti\u00eau th\u1ee5 ng\u00e0y c\u00e0ng t\u0103ng, do \u0111\u00f3 vi\u1ec7c cung c\u1ea5p m\u1ee9c ti\u00eau th\u1ee5 \u0111i\u1ec7n n\u0103ng c\u1ef1c th\u1ea5p cho c\u00e1c thi\u1ebft b\u1ecb CNTT n\u00e0y l\u00e0 r\u1ea5t quan tr\u1ecdng trong vi\u1ec7c th\u00fac \u0111\u1ea9y m\u1ed9t x\u00e3 h\u1ed9i ti\u00eau th\u1ee5 \u00edt n\u0103ng l\u01b0\u1ee3ng h\u01a1n. M\u1eb7c d\u00f9 cho \u0111\u1ebfn nay, LSI hi\u1ec7u su\u1ea5t cao v\u00e0 m\u1ee9c ti\u00eau th\u1ee5 \u0111i\u1ec7n n\u0103ng th\u1ea5p \u0111\u00e3 \u0111\u01b0\u1ee3c th\u1ef1c hi\u1ec7n th\u00f4ng qua vi\u1ec7c thu nh\u1ecf b\u00f3ng b\u00e1n d\u1eabn, nh\u01b0ng vi\u1ec7c thu nh\u1ecf h\u01a1n n\u1eefa \u0111\u00e3 ch\u1ee9ng t\u1ecf l\u00e0 th\u00e1ch th\u1ee9c v\u1ec1 m\u1eb7t c\u00f4ng ngh\u1ec7 v\u00e0 kinh t\u1ebf. Trong khi \u0111\u00f3, c\u00e1c m\u1ea1ch t\u00edch h\u1ee3p 3D trong \u0111\u00f3 nhi\u1ec1u LSI \u0111\u01b0\u1ee3c x\u1ebfp ch\u1ed3ng l\u00ean nhau kh\u00f4ng ch\u1ec9 mang l\u1ea1i kh\u1ea3 n\u0103ng t\u00edch h\u1ee3p cao v\u00e0 hi\u1ec7u su\u1ea5t cao m\u00e0 kh\u00f4ng c\u1ea7n c\u00f4ng ngh\u1ec7 thu nh\u1ecf m\u00e0 c\u00f2n mang l\u1ea1i l\u1ee3i \u00edch ti\u1ebft ki\u1ec7m n\u0103ng l\u01b0\u1ee3ng b\u1eb1ng c\u00e1ch gi\u1ea3m \u0111\u1ed9 tr\u1ec5 c\u1ee7a d\u00e2y. M\u1ed9t ph\u01b0\u01a1ng ph\u00e1p t\u1ea1o m\u00e0ng m\u1ecfng c\u00e1c LSI \u0111\u01b0\u1ee3c t\u1ea1o ri\u00eang l\u1ebb v\u00e0 x\u1ebfp ch\u1ed3ng ch\u00fang \u0111\u00e3 \u0111\u01b0\u1ee3c ph\u00e1t tri\u1ec3n nh\u01b0ng t\u1ed1n k\u00e9m v\u00e0 kh\u00f4ng c\u1ea3i thi\u1ec7n \u0111\u1ee7 m\u1eadt \u0111\u1ed9 d\u00e2y d\u1eabn. Do \u0111\u00f3, mong mu\u1ed1n c\u00f3 m\u1ed9t c\u00f4ng ngh\u1ec7 3D-LSI m\u1edbi c\u00f3 th\u1ec3 h\u00ecnh th\u00e0nh c\u00e1c m\u1ea1ch CMOS \u0111\u1ec3 x\u1ebfp ch\u00fang li\u00ean t\u1ee5c trong m\u1ed9t l\u1edbp n\u1ed1i d\u00e2y c\u1ee7a c\u00e1c m\u1ea1ch t\u00edch h\u1ee3p CMOS v\u00e0 k\u1ebft n\u1ed1i ch\u00fang v\u1edbi c\u00e1c d\u00e2y tr\u00ean v\u00e0 d\u01b0\u1edbi.<\/p>\n

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\"Greatly
H\u00ecnh 1: Quy tr\u00ecnh s\u1ea3n xu\u1ea5t b\u00f3ng b\u00e1n d\u1eabn lo\u1ea1i N b\u1eb1ng ph\u01b0\u01a1ng ph\u00e1p FLA hai b\u01b0\u1edbc<\/figcaption><\/figure>\n<\/div>\n<\/div>\n
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C\u00f9ng v\u1edbi Tsutomu Tezuka (Chuy\u00ean gia nghi\u00ean c\u1ee9u t\u1eadp trung c\u1ee5 th\u1ec3), Koji Usuda (Chuy\u00ean gia nghi\u00ean c\u1ee9u t\u1eadp trung c\u1ee5 th\u1ec3) (c\u1ea3 hai \u0111\u1ec1u hi\u1ec7n \u0111ang l\u00e0m vi\u1ec7c cho T\u1eadp \u0111o\u00e0n Toshiba) v\u00e0 nh\u1eefng ng\u01b0\u1eddi kh\u00e1c c\u1ee7a Nh\u00f3m ph\u00e1t tri\u1ec3n v\u1eadt li\u1ec7u m\u1edbi\/C\u1ea5u tr\u00fac m\u1edbi CMOS, nh\u00f3m nghi\u00ean c\u1ee9u h\u1ee3p t\u00e1c Trung t\u00e2m \u0110i\u1ec7n t\u1eed nano xanh (GNC) \u0111\u01b0\u1ee3c th\u00e0nh l\u1eadp t\u1ea1i Vi\u1ec7n nghi\u00ean c\u1ee9u \u0111i\u1ec7n t\u1eed nano c\u1ee7a AIST, v\u00e0o cu\u1ed1i th\u00e1ng 3 n\u0103m 2014, \u0111\u00e3 ti\u1ebfn h\u00e0nh nghi\u00ean c\u1ee9u h\u1ee3p t\u00e1c li\u00ean quan \u0111\u1ebfn MOSFET lo\u1ea1i P v\u00e0 lo\u1ea1i N s\u1eed d\u1ee5ng Ge \u0111a tinh th\u1ec3 (Th\u00f4ng c\u00e1o b\u00e1o ch\u00ed c\u1ee7a AIST v\u00e0o ng\u00e0y 12 th\u00e1ng 12 n\u0103m 2013). Nghi\u00ean c\u1ee9u n\u00e0y nh\u1eb1m m\u1ee5c \u0111\u00edch ph\u00e1t tri\u1ec3n c\u00e1c LSI hi\u1ec7u su\u1ea5t cao h\u01a1n, ti\u00eau th\u1ee5 \u00edt n\u0103ng l\u01b0\u1ee3ng h\u01a1n. Th\u00f4ng qua nghi\u00ean c\u1ee9u hi\u1ec7n t\u1ea1i, c\u00e1c quy tr\u00ecnh s\u1ea3n xu\u1ea5t m\u1edbi \u0111\u00e3 \u0111\u01b0\u1ee3c gi\u1edbi thi\u1ec7u, d\u1eabn \u0111\u1ebfn s\u1ef1 ph\u00e1t tri\u1ec3n c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn Ge \u0111a tinh th\u1ec3 lo\u1ea1i N v\u1edbi hi\u1ec7u su\u1ea5t cao h\u01a1n n\u1eefa.<\/p>\n

Nghi\u00ean c\u1ee9u n\u00e0y \u0111\u01b0\u1ee3c th\u1ef1c hi\u1ec7n (n\u0103m t\u00e0i ch\u00ednh 2010 \u0111\u1ebfn n\u0103m t\u00e0i ch\u00ednh 2013) t\u1ea1i GNC v\u1edbi s\u1ef1 h\u1ed7 tr\u1ee3 t\u1eeb Ch\u01b0\u01a1ng tr\u00ecnh t\u00e0i tr\u1ee3 cho R&D \u0111\u1ed5i m\u1edbi h\u00e0ng \u0111\u1ea7u th\u1ebf gi\u1edbi v\u1ec1 khoa h\u1ecdc v\u00e0 c\u00f4ng ngh\u1ec7 c\u1ee7a Hi\u1ec7p h\u1ed9i X\u00fac ti\u1ebfn Khoa h\u1ecdc Nh\u1eadt B\u1ea3n, m\u1ed9t h\u1ec7 th\u1ed1ng do H\u1ed9i \u0111\u1ed3ng Ch\u00ednh s\u00e1ch Khoa h\u1ecdc v\u00e0 C\u00f4ng ngh\u1ec7 thi\u1ebft k\u1ebf.<\/p>\n

M\u1ed9t m\u00e0ng Ge \u0111a tinh th\u1ec3 t\u1ea1o th\u00e0nh c\u00e1c b\u00f3ng b\u00e1n d\u1eabn \u0111\u01b0\u1ee3c h\u00ecnh th\u00e0nh nh\u01b0 sau: m\u1ed9t l\u1edbp oxit nhi\u1ec7t (SiO2) \u0111\u01b0\u1ee3c h\u00ecnh th\u00e0nh tr\u00ean \u0111\u1ebf Si, sau \u0111\u00f3 s\u1eed d\u1ee5ng ph\u01b0\u01a1ng ph\u00e1p b\u1eafn t\u00f3e \u0111\u1ec3 l\u1eafng \u0111\u1ecdng m\u1ed9t m\u00e0ng Ge v\u00f4 \u0111\u1ecbnh h\u00ecnh sau \u0111\u00f3 \u0111\u01b0\u1ee3c k\u1ebft tinh b\u1eb1ng qu\u00e1 tr\u00ecnh x\u1eed l\u00fd nhi\u1ec7t b\u1eb1ng c\u00e1ch \u1ee7 \u0111\u00e8n flash ( FLA). Khi m\u00e0ng Ge \u0111a tinh th\u1ec3 n\u00e0y \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng \u0111\u1ec3 t\u1ea1o th\u00e0nh b\u00f3ng b\u00e1n d\u1eabn, nhi\u1ec7t \u0111\u1ed9 \u0111\u01b0\u1ee3c s\u1eed d\u1ee5ng trong c\u00e1c qu\u00e1 tr\u00ecnh sau x\u1eed l\u00fd nhi\u1ec7t t\u1ed1i \u0111a l\u00e0 350\u00b0C, kh\u00f4ng g\u00e2y h\u01b0 h\u1ecfng, ngay c\u1ea3 khi t\u1ed3n t\u1ea1i m\u1ea1ch t\u00edch h\u1ee3p bao g\u1ed3m c\u1ea3 d\u00e2y \u0111\u1ed3ng tr\u00ean \u0111\u1ebf. Transitor nguy\u00ean m\u1eabu c\u00f3 c\u1ea5u tr\u00fac b\u00f3ng b\u00e1n d\u1eabn kh\u00f4ng c\u00f3 m\u1ed1i n\u1ed1i v\u1edbi h\u00ecnh d\u1ea1ng v\u00e2y \u0111\u01b0\u1ee3c th\u1ec3 hi\u1ec7n trong c\u00e1c s\u01a1 \u0111\u1ed3 trong ph\u1ea7n t\u00f3m t\u1eaft (s\u01a1 \u0111\u1ed3 kh\u00e1i ni\u1ec7m v\u00e0 s\u01a1 \u0111\u1ed3 c\u1ea5u tr\u00fac). T\u1ea5t c\u1ea3 c\u00e1c k\u00eanh v\u00e0 b\u1ed9 ph\u1eadn ngu\u1ed3n\/c\u1ed1ng c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn lo\u1ea1i N kh\u00f4ng c\u00f3 m\u1ed1i n\u1ed1i \u0111\u1ec1u ph\u1ea3i thu\u1ed9c lo\u1ea1i N. Tuy nhi\u00ean, do Ge \u0111a tinh th\u1ec3 th\u01b0\u1eddng l\u00e0 lo\u1ea1i P n\u00ean c\u1ea7n ph\u1ea3i chuy\u1ec3n \u0111\u1ed5i l\u1edbp Ge \u0111a tinh th\u1ec3 th\u00e0nh lo\u1ea1i N m\u00e0 v\u1eabn gi\u1eef \u0111\u01b0\u1ee3c ch\u1ea5t l\u01b0\u1ee3ng. \u0110\u1ec3 l\u00e0m \u0111i\u1ec1u n\u00e0y, sau qu\u00e1 tr\u00ecnh x\u1eed l\u00fd nhi\u1ec7t \u0111\u1ea7u ti\u00ean b\u1eb1ng ph\u01b0\u01a1ng ph\u00e1p FLA, t\u1ea1p ch\u1ea5t lo\u1ea1i N (ph\u1ed1t pho) \u0111\u00e3 \u0111\u01b0\u1ee3c c\u1ea5y v\u00e0o v\u00e0 FLA \u0111\u01b0\u1ee3c th\u1ef1c hi\u1ec7n l\u1ea7n th\u1ee9 hai \u0111\u1ec3 k\u00edch ho\u1ea1t c\u00e1c t\u1ea1p ch\u1ea5t n\u00e0y (H\u00ecnh 1). Ph\u01b0\u01a1ng ph\u00e1p FLA hai b\u01b0\u1edbc n\u00e0y c\u00f3 th\u1ec3 t\u1ea1o ra m\u00e0ng Ge \u0111a tinh th\u1ec3 lo\u1ea1i N ch\u1ea5t l\u01b0\u1ee3ng cao.<\/p>\n

\u0110\u1ed9 linh \u0111\u1ed9ng c\u1ee7a hi\u1ec7u \u1ee9ng Hall th\u1ec3 hi\u1ec7n ch\u1ea5t l\u01b0\u1ee3ng c\u1ee7a m\u00e0ng Ge \u0111a tinh th\u1ec3 \u0111\u01b0\u1ee3c t\u1ea1o ra b\u1eb1ng ph\u01b0\u01a1ng ph\u00e1p n\u00e0y \u0111\u01b0\u1ee3c th\u1ec3 hi\u1ec7n trong H\u00ecnh 2. C\u1ea3 hai m\u00e0ng Ge \u0111a tinh th\u1ec3 lo\u1ea1i N (electron) v\u00e0 lo\u1ea1i P (l\u1ed7 tr\u1ed1ng) \u0111\u1ec1u c\u00f3 \u0111\u1ed9 linh \u0111\u1ed9ng v\u01b0\u1ee3t tr\u1ed9i so v\u1edbi m\u00e0ng Ge \u0111\u01a1n tinh th\u1ec3 S\u0129. \u0110i\u1ec1u n\u00e0y cho th\u1ea5y m\u1ed9t b\u00f3ng b\u00e1n d\u1eabn c\u00f3 \u0111\u1eb7c t\u00ednh v\u01b0\u1ee3t tr\u1ed9i so v\u1edbi Si \u0111\u01a1n tinh th\u1ec3 c\u00f3 th\u1ec3 \u0111\u01b0\u1ee3c t\u1ea1o ra b\u1eb1ng c\u00e1ch s\u1eed d\u1ee5ng m\u00e0ng Ge \u0111a tinh th\u1ec3 \u0111\u01b0\u1ee3c h\u00ecnh th\u00e0nh b\u1eb1ng ph\u01b0\u01a1ng ph\u00e1p \u0111\u00e3 ph\u00e1t tri\u1ec3n.<\/p>\n

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\"Greatly
H\u00ecnh 2: \u0110\u1ed9 linh \u0111\u1ed9ng hi\u1ec7u \u1ee9ng Hall c\u1ee7a Ge \u0111a tinh th\u1ec3 \u0111\u01b0\u1ee3c t\u1ea1o ra b\u1eb1ng ph\u01b0\u01a1ng ph\u00e1p \u0111\u00e3 ph\u00e1t tri\u1ec3n<\/figcaption><\/figure>\n<\/div>\n<\/div>\n

M\u1ed9t b\u00f3ng b\u00e1n d\u1eabn Ge \u0111a tinh th\u1ec3 lo\u1ea1i N kh\u00f4ng c\u00f3 m\u1ed1i n\u1ed1i (chi\u1ec1u d\u00e0i c\u1ed5ng: 70nm) \u0111\u01b0\u1ee3c t\u1ea1o ra b\u1eb1ng c\u00e1ch x\u1eed l\u00fd m\u00e0ng Ge \u0111a tinh th\u1ec3 lo\u1ea1i N \u0111\u01b0\u1ee3c m\u00f4 t\u1ea3 \u1edf tr\u00ean th\u00e0nh h\u00ecnh d\u1ea1ng v\u00e2y v\u00e0 t\u1ea1o th\u00e0nh th\u00eam h\u1ee3p kim niken-geranium (h\u1ee3p kim Ni-Ge) trong v\u00f9ng ngu\u1ed3n v\u00e0 v\u00f9ng tho\u00e1t n\u01b0\u1edbc. C\u00e1c \u0111\u1eb7c t\u00ednh truy\u1ec1n v\u00e0 \u0111\u1ea7u ra \u0111\u01b0\u1ee3c th\u1ec3 hi\u1ec7n trong H\u00ecnh 3. Gi\u00e1 tr\u1ecb d\u00f2ng x\u1ea3 \u1edf \u0111i\u1ec7n \u00e1p ho\u1ea1t \u0111\u1ed9ng 1 V \u0111\u1ea1t g\u1ea7n 120 \u00b5A\/\u00b5m, gi\u00e1 tr\u1ecb l\u1edbn h\u01a1n kho\u1ea3ng 10 l\u1ea7n so v\u1edbi gi\u00e1 tr\u1ecb th\u00f4ng th\u01b0\u1eddng v\u00e0 t\u01b0\u01a1ng \u0111\u01b0\u01a1ng v\u1edbi MOSFET lo\u1ea1i Si N \u0111a tinh th\u1ec3 c\u00f3 k\u00edch th\u01b0\u1edbc g\u1ea7n nh\u01b0 nhau. Ng\u01b0\u1eddi ta tin r\u1eb1ng ph\u01b0\u01a1ng ph\u00e1p FLA hai b\u01b0\u1edbc \u0111\u00e3 c\u1ea3i thi\u1ec7n t\u1ed1c \u0111\u1ed9 k\u00edch ho\u1ea1t c\u1ee7a t\u1ea1p ch\u1ea5t so v\u1edbi gi\u00e1 tr\u1ecb th\u00f4ng th\u01b0\u1eddng, l\u00e0m gi\u1ea3m kh\u1ea3 n\u0103ng kh\u00e1ng k\u00fd sinh. C\u00f4ng ngh\u1ec7 \u0111\u01b0\u1ee3c ph\u00e1t tri\u1ec3n \u0111\u00e3 c\u1ea3i thi\u1ec7n r\u00f5 r\u1ec7t t\u1ed1c \u0111\u1ed9 ho\u1ea1t \u0111\u1ed9ng c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn lo\u1ea1i N, tr\u01b0\u1edbc \u0111\u00e2y \u0111\u01b0\u1ee3c coi l\u00e0 \u201cn\u00fat c\u1ed5 chai\u201d trong ho\u1ea1t \u0111\u1ed9ng m\u1ea1ch t\u00edch h\u1ee3p c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn Ge \u0111a tinh th\u1ec3. C\u00e1c b\u00f3ng b\u00e1n d\u1eabn Si \u0111a tinh th\u1ec3, th\u01b0\u1eddng \u0111\u01b0\u1ee3c so s\u00e1nh v\u1edbi c\u00e1c b\u00f3ng b\u00e1n d\u1eabn Ge \u0111a tinh th\u1ec3, th\u01b0\u1eddng c\u00f3 hi\u1ec7u su\u1ea5t k\u00e9m h\u01a1n c\u00e1c b\u00f3ng b\u00e1n d\u1eabn Si \u0111\u01a1n tinh th\u1ec3. Hi\u1ec7u su\u1ea5t c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn Ge \u0111a tinh th\u1ec3 lo\u1ea1i P \u0111\u00e3 v\u01b0\u1ee3t qua hi\u1ec7u su\u1ea5t c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn Si \u0111a tinh th\u1ec3 v\u00e0 ngang b\u1eb1ng v\u1edbi b\u00f3ng b\u00e1n d\u1eabn Si \u0111\u01a1n tinh th\u1ec3. Do \u0111\u00f3, ph\u01b0\u01a1ng ph\u00e1p \u0111\u01b0\u1ee3c ph\u00e1t tri\u1ec3n \u0111\u00e3 \u0111\u1ea1t \u0111\u01b0\u1ee3c ti\u1ebfn b\u1ed9 l\u1edbn trong vi\u1ec7c hi\u1ec7n th\u1ef1c h\u00f3a c\u00e1c m\u1ea1ch Ge CMOS \u0111a tinh th\u1ec3 hi\u1ec7u su\u1ea5t cao.<\/p>\n

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\"Greatly
H\u00ecnh 3: \u0110\u1eb7c t\u00ednh truy\u1ec1n (tr\u00e1i) v\u00e0 \u0111\u1eb7c t\u00ednh \u0111\u1ea7u ra (ph\u1ea3i) c\u1ee7a b\u00f3ng b\u00e1n d\u1eabn Ge \u0111a tinh th\u1ec3 lo\u1ea1i N \u0111\u01b0\u1ee3c ph\u00e1t tri\u1ec3n<\/figcaption><\/figure>\n<\/div>\n<\/div>\n

Trong \u0111\u1eb7c t\u00ednh truy\u1ec1n d\u1eabn \u1edf H\u00ecnh 3, d\u00f2ng \u0111i\u1ec7n \u1edf tr\u1ea1ng th\u00e1i t\u1eaft l\u1edbn, do \u0111\u00f3 t\u1ef7 l\u1ec7 b\u1eadt\/t\u1eaft khi \u00e1p d\u1ee5ng 1 V ch\u1ec9 kho\u1ea3ng 10, \u0111i\u1ec1u n\u00e0y c\u00f3 v\u1ea5n \u0111\u1ec1. Do \u0111\u00f3, \u0111\u1ec3 gi\u1ea3m d\u00f2ng \u0111i\u1ec7n ngo\u00e0i tr\u1ea1ng th\u00e1i, m\u1ed9t c\u1ea5u tr\u00fac cung c\u1ea5p kho\u1ea3ng tr\u1ed1ng gi\u1eefa c\u00e1c \u0111i\u1ec7n c\u1ef1c Ni-Ge v\u00e0 c\u1ed5ng \u0111\u00e3 \u0111\u01b0\u1ee3c \u0111\u01b0a v\u00e0o, gi\u1ea3m d\u00f2ng \u0111i\u1ec7n ngo\u00e0i tr\u1ea1ng th\u00e1i xu\u1ed1ng 1\/1000 (H\u00ecnh 4). M\u1eb7c d\u00f9 d\u00f2ng \u0111i\u1ec7n \u1edf tr\u1ea1ng th\u00e1i b\u1eadt gi\u1ea3m nh\u1eb9, nh\u01b0ng c\u00f3 th\u1ec3 d\u1ef1 \u0111o\u00e1n \u0111\u01b0\u1ee3c d\u00f2ng \u0111i\u1ec7n \u1edf tr\u1ea1ng th\u00e1i b\u1eadt cao v\u00e0 d\u00f2ng \u0111i\u1ec7n \u1edf tr\u1ea1ng th\u00e1i t\u1eaft th\u1ea5p b\u1eb1ng c\u00e1ch t\u1ed1i \u01b0u h\u00f3a kho\u1ea3ng c\u00e1ch gi\u1eefa c\u00e1c \u0111i\u1ec7n c\u1ef1c Ni-Ge v\u00e0 c\u1ed5ng.<\/p>\n

C\u00e1c k\u1ebf ho\u1ea1ch trong t\u01b0\u01a1ng lai bao g\u1ed3m vi\u1ec7c h\u00ecnh th\u00e0nh m\u1ed9t m\u1ea1ch t\u00edch h\u1ee3p k\u1ebft h\u1ee3p Ge \u0111a tinh th\u1ec3 lo\u1ea1i P v\u00e0 lo\u1ea1i N.\u00a0Linh ki\u1ec7n b\u00e1n d\u1eabn<\/a>\u00a0l\u00ean m\u1ed9t m\u00e0ng c\u00e1ch \u0111i\u1ec7n v\u00e0 ki\u1ec3m tra ho\u1ea1t \u0111\u1ed9ng c\u1ee7a m\u1ea1ch \u0111i\u1ec7n. C\u00e1c m\u1ee5c ti\u00eau xa h\u01a1n bao g\u1ed3m ph\u00e1t tri\u1ec3n 3D-LSI v\u1edbi Ge \u0111a tinh th\u1ec3 x\u1ebfp ch\u1ed3ng l\u00ean nhau nh\u1eb1m thu nh\u1ecf \u0111\u00e1ng k\u1ec3 LSI, t\u0103ng hi\u1ec7u su\u1ea5t v\u00e0 gi\u1ea3m m\u1ee9c ti\u00eau th\u1ee5 \u0111i\u1ec7n n\u0103ng.<\/p>\n

\n
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\"Greatly
H\u00ecnh 4: S\u01a1 \u0111\u1ed3 c\u1ea5u tr\u00fac c\u1ee7a thi\u1ebft b\u1ecb c\u1ea3i ti\u1ebfn (tr\u00e1i) a<\/figcaption><\/figure>\n<\/div>\n<\/div>","protected":false},"excerpt":{"rendered":"

A research collaborative has developed a new polycrystalline film-forming technology to achieve a three-dimensional (3D) stacking technology for large-scale integrated circuits (LSIs), greatly improving the performance of N-type polycrystalline germanium (Ge) transistors.   Polycrystalline Ge can be formed at a lower temperature (500 \u00b0C or below) than the widely used polycrystalline silicon (Si). This allows<\/p>","protected":false},"author":1,"featured_media":7997,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":[],"categories":[1],"tags":[],"acf":[],"_links":{"self":[{"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/posts\/7993"}],"collection":[{"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/comments?post=7993"}],"version-history":[{"count":1,"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/posts\/7993\/revisions"}],"predecessor-version":[{"id":7998,"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/posts\/7993\/revisions\/7998"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/media\/7997"}],"wp:attachment":[{"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/media?parent=7993"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/categories?post=7993"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.huashu-tech.com\/vi\/wp-json\/wp\/v2\/tags?post=7993"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}